Laser-Strahlenteiler HC BS R405 1 lambda PV flat

556,00 €*

Sofort verfügbar, Lieferzeit: 1-3 Werktage

Artikel-Nr.: F38-406
Produktinformationen "Laser-Strahlenteiler HC BS R405 1 lambda PV flat"
AOI 45°
Reflexion 372-410 nm > 98% für s-pol.
Reflexion 372-410 nm > 90% für p-pol.
Reflexion 372-410 nm > 94%
Reflexion 350-372 nm > 90% durchschnittlich
Transmission 417.4 - 1200.0 nm >93% durchschnittlich
EBENHEIT: < 1 lambda P-V RWE @ 632.8 nm
Abmessung 25,2 x 35,6 x 1,05 mm
Spezifikationen
OEM-/Originalnummer: Di03-R405-t1-25x36
Reflection Band 1: Rabs > 94% 372 - 410 nm
Reflection Band 1 (p-pol): Rabs > 90% 372 - 410 nm
Reflection Band 1 (s-pol): Rabs > 98% 372 - 410 nm
Transmission Band 1: Tavg > 93% 417.4 - 1200 nm
Laser Wavelengths 1: 375 +/- 3 nm & 405 +/- 5 nm
Angle of Incidence: 45 degrees with a shift of 0.35%/degree (40 - 50 degrees)
Cone Half-angle: 0.5 degrees
Optical Damage Rating: 1 J/cm² @ 532 nm (10 ns pulse width)
Filter Effective Index: 2.18
Understanding `Effective Index of Refraction` neff
Substrate type: low-autofluorescence optical quality glass
Reflected Wavefront Error (3 mm: < 0.2λ P-V RWE @ 632.8 nm
Flatness / RWE Classification: Super-resolution / TIRF
Reflected Wavefront Error: < 1λ P-V RWE @ 632.8 nm
Transverse Dimensions (L x W): 25.2 mm x 35.6 mm
Transverse Tolerance: ± 0.1 mm
Filter Thickness (1 mm, unmount: 1.05 mm
Filter Thickness Tolerance (1 m: ± 0.05 mm
Filter Thickness (3 mm, unmount: 3.0 mm
Filter Thickness Tolerance (3 m: ± 0.1 mm
Clear Aperture: ≥ 80% (elliptical)
Scratch-Dig: 60-40
Substrate Thickness (1 mm, unmo: 1.05 mm
Substrate Thickness Tolerance (: ± 0.05 mm
Substrate Thickness (3 mm, unmo: 3.0 mm
Other physical specs: Standard Specifications of Our Filters and Beam Splitters
Abmessungen: 25,2 x 35,6 mm
Anzahl Bänder/Kanten/Notch: 1
Art des Strahlenteilers: Langpass
Garantie: 10 Jahre
Kantensteilheit: Standard für Fluoreszenz
Laserwellenlänge (nm): 405
Anwendung (bs): Laser-Anwendung
CWL/EdgeWL/NotchWL (nm): 405
geeignet für: Laser-Anwendungen
Substratdicke: 1 mm
Damage Threshold: 1 J/cm² @ 532 nm (10 ns pulse width)
Scratch-Dig: 60-40